Hybrid 2D‐QD MoS ₂ –PbSe Quantum Dot Broadband Photodetectors with High‐Sensitivity and Room‐Temperature Operation at 2.5 µm

Broadband infrared photodetectors have profound importance in diverse applications including security, gas sensing, bioimaging, spectroscopy for food quality, and recycling, just to name a few. Yet, these can currently be served by expensive epitaxially grown photodetectors, limiting their market potential social impact. The use of colloidal quantum dots (CQDs) 2D materials hybrid layout is an attractive alternative design low-cost complementary metal-oxide-semiconductor (CMOS) compatible photodetectors. However, the spectral sensitivity conventional detectors restricted 2.1 µm. Herein, structure comprising molybdenum disulfide (MoS2) with lead selenide (PbSe) CQDs presented extend further toward mid-wave infrared, up 3 A room-temperature responsivity 137.6 W−1 detectivity 7.7 × 1010 Jones are achieved at 2.55 µm owing highly efficient photoexcited carrier separation interface MoS2 PbSe combination oxide coating reduce dark current; highest value yet PbSe-based device. These findings strongly support successful fabrication devices, which may pave pathway cost-effective, high-performance, next-generation, novel